1 transistor 2sa1619, 2sa1619a silicon pnp epitaxial planer type for low-frequency power amplification and driver amplification complementary to 2sc4208 and 2sc4208a n features l complementary pair with 2sc4208 and 2sc4208a. l allowing supply with the radial taping and automatic insertion possible. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C30 C60 C25 C50 C5 C1 C 0.5 1 150 C55 ~ +150 unit v v v a a w ?c ?c 2sa1619 2sa1619a 2sa1619 2sa1619a n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol i cbo v cbo v ceo v ebo h fe1 * h fe2 v ce(sat) v be(sat) f t c ob conditions v cb = C20v, i e = 0 i c = C10 m a, i e = 0 i c = C10ma, i b = 0 i e = C10 m a, i c = 0 v ce = C10v, i c = C150ma v ce = C10v, i c = C500ma i c = C300ma, i b = C30ma i c = C300ma, i b = C30ma v cb = C10v, i e = 50ma, f = 200mhz v cb = C10v, i e = 0, f = 1mhz min C30 C60 C25 C50 C5 85 40 typ 160 C 0.35 C1.1 200 6 max C 0.1 340 C 0.6 C1.5 15 unit m a v v v v v mhz pf * h fe1 rank classification rank q r s h fe1 85 ~ 170 120 ~ 240 170 ~ 340 unit: mm 1:emitter 2:collector 3:base toC92nl package 5.0 0.2 13.5 0.5 0.7 0.2 8.0 0.2 1.27 123 1.27 4.0 0.2 0.45 +0.15 ?.1 0.45 +0.15 ?.1 2.3 0.2 0.7 0.1 2.54 0.15 2sa1619 2sa1619a 2sa1619 2sa1619a
2 transistor 2sa1619, 2sa1619a 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?0 ?6 ? ?2 ? 0 ?00 ?00 ?00 ?00 ?00 ?00 ?00 ?00 ta=25?c i b =?0ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 ?0 ? ? ? ? 0 ?00 ?00 ?00 ?00 ?00 ?00 ?00 ?00 v ce =?0v ta=25?c base current i b ( ma ) collector current i c ( ma ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0 600 500 400 300 200 100 v ce =?0v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 240 200 160 120 80 40 v cb =?0v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) ? ? ?0 ?0 ?00 0 24 20 16 12 8 4 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0 ?20 ?00 ?0 ?0 ?0 ?0 i c =?ma ta=25?c 2sa1619a 2sa1619 base to emitter resistance r be ( k w ) collector to emitter voltage v cer ( v ) p c ta i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb v cer r be
3 transistor 2sa1619, 2sa1619a 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v ce =?0v ambient temperature ta ( ?c ) i ceo ( ta ) i ceo ( ta=25?c ) ?0.1 ? ?0 ?00 ?0.3 ? ?0 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 single pulse ta=25?c t=10ms t=1s i cp i c collector to emitter voltage v ce ( v ) collector current i c ( ma ) i ceo ta area of safe operation (aso)
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